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MOSFET drain and induced-gate noise modeling and...
Conference
MOSFET drain and induced-gate noise modeling and experimental verification for RF IC design
Authors
Chen C-H; Li F; Cheng Y
Pagination
pp. 51-56
Publication Date
January 1, 2004
ISBN-10
0-7803-8262-5
DOI
10.1109/ICMTS.2004.1309300
Associated Experts
Chih-hung Chen
Associate Professor, Faculty of Engineering
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Labels
Fields of Research (FoR)
40 Engineering
4009 Electronics, Sensors and Digital Hardware
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