Conference
Recent Advancement in High-Frequency Noise Characterization for Nano-Scale FETs
Abstract
This paper covers three recent improvements in high- frequency (HF) noise characterization for nano-scale field-effect transistors (FET). It includes (1) system- aware Device-Under-Test (DUT) design for optimum HF on-wafer noise measurement, (2) statistically robust and cost-effective gate resistance extraction algorithm, and (3) low-power noise source working in subthreshold region for mobile/portable applications. Experimental data and …
Authors
Chen C-H; Chen X; V. P
Volume
00
Pagination
pp. 1-4
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
November 3, 2018
DOI
10.1109/icsict.2018.8564902
Name of conference
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)