Scholarly Works

Issues in High-Frequency Noise Characterization...

Issues in High-Frequency Noise Characterization and Modeling of MOSFETs

Abstract

This paper provides an overview on the major issues in the high-frequency noise characterization of deep submicron MOSFETs for RF IC applications. It includes the HF noise parameter measurements, test structure design, parameter de-embedding, noise source extraction, physics-based noise models and noise sources implementations.

Authors

Chen C-H

Pagination

pp. 119-122

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

January 1, 2005

DOI

10.1109/rfit.2005.1598889

Name of conference

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks

Associated Experts

Chih-hung Chen

Associate Professor, Faculty of Engineering

Labels

Fields of Research (FoR)

4012 Fluid Mechanics and Thermal Engineering 40 Engineering

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