Journal article
Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets
Abstract
We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of GaAs nanowires. At 10 K, neutral excitons confined in these quantum dots give rise to photoluminescence lines between 1.1 and 1.4 eV. Magneto-photoluminescence spectroscopy reveals that, for small quantum dots …
Authors
Corfdir P; Lewis RB; Geelhaar L; Brandt O
Journal
Physical Review B, Vol. 96, No. 4,
Publisher
American Physical Society (APS)
Publication Date
July 1, 2017
DOI
10.1103/physrevb.96.045435
ISSN
2469-9950