Structural and physical properties of InAlAs quantum dots grown on GaAs Conferences

authors

• Vasile, BS
• Daly, A Ben
• Craciun, D
• Alexandrou, I
• Lazar, Sorin
• Lemaître, A
• Maaref, MA
• Iacomi, F
• Craciun, V

status

• published 

publication date

• April 2018

has subject area

• 0204 Condensed Matter Physics (FoR)
• 0206 Quantum Physics (FoR)
• 0303 Macromolecular and Materials Chemistry (FoR)
• General Physics (Science Metrix)

published in

• Physica B: Condensed Matter  Journal

presented at event

• 7th South African Conference on Photonic Materials (SACPM)  Conference

keywords

• GE
• High-resolution X-ray diffraction
• High-resolution transmission electron microscopy
• INGAAS
• ISLANDS
• MOLECULAR-BEAM EPITAXY
• PHOTOLUMINESCENCE
• Photoluminescence
• Physical Sciences
• Physics
• Physics, Condensed Matter
• Reciprocal space mapping
• Science & Technology
• Type-II quantum dots

Digital Object Identifier (DOI)

• 10.1016/j.physb.2017.07.054

start page

• 262

end page

• 267

volume

• 535