Conference
Structural and physical properties of InAlAs quantum dots grown on GaAs
Abstract
Quantum dots (QDs), which have particular physical properties due to the three dimensions confinement effect, could be used in many advanced optoelectronic applications. We investigated the properties of InAlAs/AlGaAs QDs grown by molecular beam epitaxy on GaAs/Al0.5Ga0.5As layers. The optical properties of QDs were studied by low-temperature photoluminescence (PL). Two bandgap transitions corresponding to the X-Sh and X-Ph energy structure …
Authors
Vasile BS; Daly AB; Craciun D; Alexandrou I; Lazar S; Lemaître A; Maaref MA; Iacomi F; Craciun V
Volume
535
Pagination
pp. 262-267
Publisher
Elsevier
Publication Date
April 2018
DOI
10.1016/j.physb.2017.07.054
Conference proceedings
Physica B Condensed Matter
ISSN
0921-4526