Journal article
Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing
Abstract
Abstract Multiferroic materials, which exhibit multiple orderings, are promising for next generation data‐storage device applications. YMnO 3 , in particular, because of the coexistence of the ferroelectricity and (anti)ferromagnetism within one single material, has drawn special attentions to application‐based research. However, the role of defect chemistry related to the behaviors of the ferroelectric polarization has been seldomly studied …
Authors
Cheng S; Meng Q; Han M; Deng S; Li X; Zhang Q; Tan G; Botton GA; Zhu Y
Journal
Advanced Electronic Materials, Vol. 5, No. 4,
Publisher
Wiley
Publication Date
April 2019
DOI
10.1002/aelm.201800827
ISSN
2199-160X