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Revealing the Effects of Trace Oxygen Vacancies on...
Journal article

Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing

Abstract

Abstract Multiferroic materials, which exhibit multiple orderings, are promising for next generation data‐storage device applications. YMnO 3 , in particular, because of the coexistence of the ferroelectricity and (anti)ferromagnetism within one single material, has drawn special attentions to application‐based research. However, the role of defect chemistry related to the behaviors of the ferroelectric polarization has been seldomly studied …

Authors

Cheng S; Meng Q; Han M; Deng S; Li X; Zhang Q; Tan G; Botton GA; Zhu Y

Journal

Advanced Electronic Materials, Vol. 5, No. 4,

Publisher

Wiley

Publication Date

April 2019

DOI

10.1002/aelm.201800827

ISSN

2199-160X