Plasmon-Induced Heterointerface Thinning for Schottky Barrier Modification of Core/Shell SiC/SiO2 Nanowires

In this work, plasmon-induced heterointerface thinning for Schottky barrier modification of core/shell SiC/SiO₂ nanowires is conducted by femtosecond (fs) laser irradiation. The incident energy of polarized fs laser (50 fs, 800 nm) is confined in the SiO₂ shell of the nanowire due to strong plasmonic localization in the region of the electrode-nanowire junction. With intense nonlinear absorption in SiO₂, the thickness of the SiO₂ layer can be thinned in a controllable way. The tuning of the SiO₂ barrier layer allows the promotion of electron transportation at the electrode-nanowire interface. The switching voltage of the rectifying junction made by the SiC/SiO₂ nanowire can be significantly tuned from 15.7 to 1 V. When selectively thinning at source and drain electrodes and leaving the SiO₂ barrier layer at the gate electrode intact, a metal/oxide/semiconductor (MOS) device is fabricated with low leakage current. This optically controlled interfacial engineering technology should be applicable for MOS components and other heterogeneous integration structures.