Journal article
High-power, TIL-type gate-assisted turn-off thyristors
Abstract
The work reports the development of trial high-voltage (2000–2500 V), highcurrent (up to 500 A) gate-assisted turn-off (GAT) thyristors based on the novel, double-interdigitated or two interdigitation levels (TIL) gate-cathode configuration. The active cathode area of devices is only 1.7 cm2. The test TIL GATTs were both normal, i.e. using no lifetime killers and gold-diffused at several temperatures. The investigations revealed the high …
Authors
SILARD A; ŢURŢUDĂU F; MĂRGĂRIT M
Journal
International Journal of Electronics, Vol. 60, No. 3, pp. 347–359
Publisher
Taylor & Francis
Publication Date
March 1986
DOI
10.1080/00207218608920791
ISSN
0020-7217