Modeling the morphology of self-assisted GaP nanowires grown by molecular beam epitaxy

The morphologies of self-assisted GaP nanowires grown by gas source MBE in regular arrays on silicon substrates are modeled by a kinetic equation for the nanowire radius versus the position along the nanowire axis. The most important growth parameter that governs the nanowire morphology is the V/III flux ratio. Sharpened nanowires with a stable radius equal to only 12 nm at a V/III flux ratio of 6 are achieved, demonstrating their suitability for the insertion of quantum dots.