Diameter Dependent Heating in GaAs Nanowires

The photo-thermal properties of vertically etched gallium arsenide nanowire arrays are examined using Raman spectroscopy. The nanowires are arranged in square lattices with a constant pitch of 400 nm, and diameters ranging from 50 to 155 nm. The arrays were illuminated using a 532 nm laser with an incident energy density of 10 ${\rm W}/{\rm mm}^{2}$. Nanowire temperatures were highly dependent on the nanowire diameter, and were determined by …