Conference
Short Noise Suppression Factor for Nano-Scale MOSFETs Working in the Saturation Region
Abstract
In this paper, we present a consistent perspective to interpret the channel noise of MOSFETs as suppressed shot noise for both long- and short-channel devices. We also derive an easy-to-use analytical equation for the shot noise suppression factor of MOSFETs working in the saturation region. The expression only relies on two process parameters - threshold voltage and effective oxide thickness, to predict the level of suppression for any CMOS …
Authors
Chen X; Chen C-H; Deen MJ
Pagination
pp. 1-4
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
June 1, 2017
DOI
10.1109/icnf.2017.7986017
Name of conference
2017 International Conference on Noise and Fluctuations (ICNF)