Journal article
A Novel Bonding Method for Ionic Wafers
Abstract
A novel method for bonding sapphire, ${\hbox{LiNbO}}_{3}$, quartz, and glass wafers with silicon using the modified surface activated bonding (SAB) method is described. In this method, the mating surfaces were cleaned and simultaneously coated with nano-adhesion Fe layers using a low energy argon ion beam. The optical images show that the entire area of the 4-in wafers of ${\hbox{LiNbO}}_{3}$/Si was bonded. Such images for other samples show …
Authors
Howlader MMR; Suga T; Kim MJ
Journal
IEEE Transactions on Advanced Packaging, Vol. 30, No. 4, pp. 598–604
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
November 1, 2007
DOI
10.1109/tadvp.2007.906394
ISSN
1521-3323