Role of Heating on Plasma-Activated Silicon Wafers Bonding

This paper reports on a comparative study of silicon wafer bonding using O2 reactive ion etching (RIE) vs sequential plasma-activated bonding (SPAB). The study shows the measurement of silicon surface roughness and the investigation of heating influences on the bonding strength and microstructures of silicon∕silicon bonded interfaces as a function of the plasma processing parameters such as plasma time and gas pressure. In SPAB, the surfaces …