Room temperature Cu–Cu direct bonding using surface activated bonding method

Thin copper (Cu) films of 80 nm thickness deposited on a diffusion barrier layered 8 in. silicon wafers were directly bonded at room temperature using the surface activated bonding method. A low energy Ar ion beam of 40–100 eV was used to activate the Cu surface prior to bonding. Contacting two surface-activated wafers enables successful Cu–Cu direct bonding. The bonding process was carried out under an ultrahigh vacuum condition. No thermal …