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Formation of gallium arsenide nanostructures in...
Journal article

Formation of gallium arsenide nanostructures in Pyrex glass

Abstract

In this paper, we report on a simple, low-cost process to grow GaAs nanostructures of a few nm diameter and ∼50 nm height in Pyrex glass wafers. These nanostructures were grown by sequential plasma activation of GaAs and Pyrex glass surfaces using a low-temperature hybrid plasma bonding technology in air. Raman analyses of the activated surfaces show gallium oxide and arsenic oxide, as well as suppressed non-bridging oxygen with aluminate and …

Authors

Howlader MMR; Zhang F; Deen MJ

Journal

Nanotechnology, Vol. 24, No. 31,

Publisher

IOP Publishing

Publication Date

August 9, 2013

DOI

10.1088/0957-4484/24/31/315301

ISSN

0957-4484

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