Formation of gallium arsenide nanostructures in Pyrex glass

In this paper, we report on a simple, low-cost process to grow GaAs nanostructures of a few nm diameter and ∼50 nm height in Pyrex glass wafers. These nanostructures were grown by sequential plasma activation of GaAs and Pyrex glass surfaces using a low-temperature hybrid plasma bonding technology in air. Raman analyses of the activated surfaces show gallium oxide and arsenic oxide, as well as suppressed non-bridging oxygen with aluminate and boroxol chains in glass. The flow of alkaline ions toward the cathode and the replacement of alkaline ions by Ga and As ions in glass result in the growth of GaAs nanostructures in nanopores/nanoscratches in glass. These nanopores/nanoscratches are believed to be the origin of the growth of the nanostructures. It was found that the length of the GaAs nanostructures may be controlled by an electrostatic force. Cross-sectional observation of the bonded interface using high-resolution transmission electron microscopy confirms the existence of the nanostructures. A possible application of the nanostructures in glass is a filtration system for biomolecules.