Journal article
A two-dimensional DFB laser model accounting for carrier transport effects
Abstract
A two-dimensional numerical model for DFB semiconductor laser simulation is developed and presented. In this model the transverse carrier transport and longitudinal spatial/spectral hole-burning effects in a bulk DFB laser are accounted for rigorously. Comparison with simplified models is made. Methods for improving the accuracy of steady-state and small-signal analyses by the simplified models are proposed and verified.<>
Authors
Sadovnikov AD; Li X; Huang W-P
Journal
IEEE Journal of Quantum Electronics, Vol. 31, No. 10, pp. 1856–1862
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
1995
DOI
10.1109/3.466062
ISSN
0018-9197