(Invited) Passivation of III-V Nanowires for Optoelectronics

Surface passivation of III-V compound semiconductor nanowires is presented. InAs and GaAs nanowire cores were grown using gas source molecular beam epitaxy followed by a passivating shell of InAl(As,P). Improvements in electrical and optical (luminescence) properties of the nanowires were observed upon passivation due to removal of detrimental surface states. Passivation of InP nanowires by polysulfide solution is also demonstrated to improve luminescence.