(Invited) Passivation of III-V Nanowires for Optoelectronics Conferences

abstract

• Surface passivation of III-V compound semiconductor nanowires is presented. InAs and GaAs nanowire cores were grown using gas source molecular beam epitaxy followed by a passivating shell of InAl(As,P). Improvements in electrical and optical (luminescence) properties of the nanowires were observed upon passivation due to removal of detrimental surface states. Passivation of InP nanowires by polysulfide solution is also demonstrated to improve luminescence.

authors

• Lapierre, Ray Robert
• Chia, Andrew C
• Haapamaki, Chris M
• Tajik, Nooshin
• Li, Y
• Zhao, S
• Mi, Z

status

• published 

publication date

• April 27, 2012

published in

• ECS Transactions  Journal

presented at event

• 2nd International Symposium on Nanoscale Luminescent Materials as Part of the 221st Meeting of the Electrochemical-Society (ECS)  Conference

keywords

• Electrochemistry
• Materials Science
• Materials Science, Multidisciplinary
• Physical Sciences
• Science & Technology
• Technology

Digital Object Identifier (DOI)

• 10.1149/1.3700409

International Standard Book Number (ISBN) 13

• 978-1-56677-957-9

start page

• 51

end page

• 60

volume

• 45

issue

• 5