(Invited) Novel Luminescent Materials Based on Semiconductor Nanowires

Recent work on the photoluminescence (PL) properties of InAsP/InP nanowires are reported. InP nanowires were grown on <111> Si substrates by the Au-assisted vapor-liquid-solid process in a gas source molecular beam epitaxy system. InAsyP1-y segments were grown within the InP nanowires, creating single or multiple quantum dots structures. The quantum dot dimensions and composition were determined by scanning electron microscopy (SEM), transmission …