(Invited) Novel Luminescent Materials Based on Semiconductor Nanowires Conferences

abstract

• Recent work on the photoluminescence (PL) properties of InAsP/InP nanowires are reported. InP nanowires were grown on <111> Si substrates by the Au-assisted vapor-liquid-solid process in a gas source molecular beam epitaxy system. InAsyP1-y segments were grown within the InP nanowires, creating single or multiple quantum dots structures. The quantum dot dimensions and composition were determined by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive x-ray spectroscopy (EDX). PL from the quantum dot structures could be tuned by the InAsyP1-y composition (y), or by the size of the quantum dot via the quantum confinement effect. Cathodoluminescence (CL) measurements confirmed localized emission from the quantum dots. To reduce detrimental surface states, the nanowires were passivated with an AlInP shell, which resulted in strong PL emission.

authors

• Lapierre, Ray Robert
• Gustafsson, Anders
• Kuyanov, Paul
• Haapamaki, Chris

status

• published 

publication date

• March 25, 2014

published in

• ECS Transactions  Journal

presented at event

• International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 has been held as a part of the 225th Meeting of the Electrochemical-Society  Conference

keywords

• Electrochemistry
• Nanoscience & Nanotechnology
• Physical Sciences
• Science & Technology
• Science & Technology - Other Topics

Digital Object Identifier (DOI)

• 10.1149/06105.0003ecst

start page

• 3

end page

• 8

volume

• 61

issue

• 5