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Characterization of a Ga-Assisted GaAs Nanowire...
Journal article

Characterization of a Ga-Assisted GaAs Nanowire Array Solar Cell on Si Substrate

Abstract

A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet-dependent properties to minimize passivation layer removal for electrical contacting is demonstrated. Thorough electrical characterization and analysis …

Authors

Boulanger JP; Chia ACE; Wood B; Yazdi S; Kasama T; Aagesen M; LaPierre RR

Journal

IEEE Journal of Photovoltaics, Vol. 6, No. 3, pp. 661–667

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

DOI

10.1109/jphotov.2016.2537547

ISSN

2156-3381