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Optimization of Bonded III-V on Si Multi-Junction...
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Optimization of Bonded III-V on Si Multi-Junction Solar Cells

Abstract

In this work, a high efficiency III-V on Si 3-junction solar cell achieved through intermediate metal connection and areal current matching is presented. The cell has an efficiency of 25.8% under 1 sun AM 1.5G. Factors that are important to the further improvement of the cell performance are discussed. By advanced optical coupling methods, the reflection loss at the bonding interface can be reduced to less than 5%. Shadowing loss can be reduced …

Authors

Yang J; Kleiman R

Pagination

pp. 2151-2153

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

June 1, 2013

DOI

10.1109/pvsc.2013.6744900

Name of conference

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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