Conference
50 nm Vertical Replacement-Gate (VRG) pMOSFETs
Abstract
We present the first p-channel Vertical Replacement-Gate (VRG) MOSFETs. Like the VRG-nMOSFETs demonstrated last year, these devices show promise as a successor to planar MOSFETs for highly-scaled ULSI. Our pMOSFETs retain the key features of the nMOSFETs and add channel doping by ion implantation and raised source/drain extensions (SDEs). We have significantly improved the core VRG process to provide high-performance devices with gate lengths …
Authors
Oh S-H; Hergenrother JM; Nigam T; Monroe D; Klemens FP; Kornblit A; Mansfield WM; Baker MR; Barr DL; Baumann FH
Pagination
pp. 65-68
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2000
DOI
10.1109/iedm.2000.904260
Name of conference
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)