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Two-dimensional dopant profiling of a 60 nm gate length nMOSFET using scanning capacitance microscopy
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Additional Document Info
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Overview
authors
Timp, W
O'Malley, ML
Kleiman, Rafael
Garno, JP
status
accepted
publication date
January 1, 1998
published in
Technical Digest - International Electron Devices Meeting
Journal
presented at event
International Electron Devices Meeting 1998. Technical Digest
Conference
Research
keywords
Engineering
Engineering, Electrical & Electronic
Science & Technology
Technology
Identity
Digital Object Identifier (DOI)
10.1109/iedm.1998.746419
International Standard Book Number (ISBN) 10
0-7803-4774-9
Additional Document Info
start page
555
end page
558