Design optimization for 25 Gbit/s DML InGaAlAs/InGaAsP/InP SL-MQW laser diode incorporating temperature effect

In this paper, a detailed carrier dynamics model for quantum well lasers is used to study the modulation bandwidth of the directly modulated strained-layer multiple quantum well (SL-MQW) laser. The active region of the directly modulated laser (DML) is optimized in terms of the number of QWs and barrier height. To compromise the device dynamic performance at different operating temperatures, we present an overall optimized design for a 25 Gbps …