On transconductance in the p-channel Si/SiGe heteroj unction field effect transistor

Three factors affecting the transconductance characteristics of inversion-channel heterojunction field effect transistors are discussed. In each case, the effect on the hole population in the channel and, thereby, on the transconductance of the device is hypothesized. Experimental evidence which corroborates the effect of the various phenomena is also presented. These factors are (i) saturation of the hole population in the channel arising from dopant de-ionization in the charge sheet, (ii) parallel gate to source and drain current conduction arising from the physical structure of the device, and (iii) the effect of gate leakage on the non-equilibrium surface potential of the n–n heterojunction.

On transconductance in the p-channel Si/SiGe heteroj unction field effect transistor Conferences