Enhanced Lithographic Imaging Layer Meets Semiconductor Manufacturing Specification a Decade Early

This scanning electron microscopy image (∼2 μm wide) depicts high‐aspect‐ratio features patterned in silicon using sequential infiltration synthesis (SIS) enhancement of photoresist. SIS penetrates the polymeric resist layer with etch‐resistant alumina, thereby transforming it into a hard mask. This conversion enables the use of very thin resist layers, so pattern collapse is virtually eliminated and goals set forth for lithography in 2022 can be achieved today.