Conference
The impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs
Abstract
This paper discusses the impact of noise parameter de-embedding in n-MOSFETs. A method to directly de-embed the parasitic pad effects from the measured noise parameters (minimum noise figure NF/sub min/, equivalent noise resistance R/sub n/, and optimized source reflection coefficient /spl Gamma//sub opt/) and the impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs is presented. In addition, noise parameter …
Authors
Deen MJ; Chen C-H
Pagination
pp. 34-39
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1999
DOI
10.1109/icmts.1999.766212
Name of conference
ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)