Conference
Temperature effects in complementary metal-oxide semiconductor microwave distributed amplifiers
Abstract
Broadband amplifiers implemented in complementary metal-oxide semiconductor technology offer a low-cost solution as gain elements for wideband communication systems. These components must maintain an acceptable target performance for a wide range of temperatures. We present experimental results for the gain, reflection coefficients, and group delay of a broadband amplifier operating from 2to14GHz in the temperature range of 25–125°C. The …
Authors
Ranuárez JC; Deen MJ; Chen CH
Volume
24
Pagination
pp. 831-834
Publisher
American Vacuum Society
Publication Date
May 1, 2006
DOI
10.1116/1.2192524
Conference proceedings
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Issue
3
ISSN
0734-2101