Unique dc characteristics of a new gated lateral pnp bipolar junction transistor (BJT) using 0.8 mu m BiCMOS technology
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Overview
status
publication date
- January 1, 1996
has subject area
- 01 Mathematical Sciences (FoR)
- 02 Physical Sciences (FoR)
- General Physics (Science Metrix)
published in
- Canadian Journal of Physics Journal