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Photosensitive Polymer Thin-Film FETs Based on...
Journal article

Photosensitive Polymer Thin-Film FETs Based on Poly(3-octylthiophene)

Abstract

The effects of white light on the electrical performance of polymer thin-film transistors (PTFTs) based on regioregular poly(3-octylthiophene) (P3OT) are investigated. Upon illumination, a significant increase in the PFET's drain current is observed with a maximum photosensitivity of 10/sup 4/ in the subthreshold operation and a broad-band responsivity with a maximum value of 160 mA/W at irradiance of 1.7 mW/cm/sup 2/ and at low gate biases. …

Authors

Deen MJ; Kazemeini MH

Journal

Proceedings of the IEEE, Vol. 93, No. 7, pp. 1312–1320

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

July 1, 2005

DOI

10.1109/jproc.2005.850300

ISSN

0018-9219