Low‐Frequency Noise in RF nMOS Transistors from a 70 nm CMOS Technology

Low frequency noise in gate and drain currents is presented for RF nMOS transistors from a 70nm CMOS technology. The transistors with thin oxide (EOT=1.8nm) have increased currents in subthreshold regime, owing to the gate leakage current due to Fowler‐Nordheim tunneling. The low‐frequency noise in the gate current scales approximately with the square of the gate leakage current, resulting in KF=f×SIG/IG2≈1.5×10−9. The low frequency noise in drain current follows the number fluctuation model with correlated mobility fluctuation. The correlation between gate and drain noise currents is weak, less than 30%, suggesting an independence between these noise currents.