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Effect of mesa overgrowth on low-frequency noise...
Journal article

Effect of mesa overgrowth on low-frequency noise in planar separate absorption, grading, charge, and multiplication avalanche photodiodes

Abstract

The purpose of this paper is to present a detailed comparison of the low-frequency noise in single-growth and mesa overgrown planar separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APD's) passivated with SiN/sub x/. It was found that existing models did not explain the bias dependence of the low-frequency noise in the mesa overgrown devices. We have found that a low-temperature anneal decreased the …

Authors

An S; Deen MJ; Vetter AS; Clark WR; Noel J-P; Shepherd FR

Journal

IEEE Journal of Quantum Electronics, Vol. 35, No. 8, pp. 1196–1202

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

1999

DOI

10.1109/3.777220

ISSN

0018-9197