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Intrinsic Noise Currents in Deep Submicron Mosfets
Conference

Intrinsic Noise Currents in Deep Submicron Mosfets

Abstract

A systemic extraction method to obtain the induced gate noise (igig*), channel thermal noise (idid*)and their cross-correlation term (igid*) in submicron MOSFETs directly from scattering and RF noise measurements is presented and verified with measurements. The extracted noise currents versus frequency, bias condition and channel length for MOSFETs from a 0.18µm CMOS process are presented and discussed.

Authors

Chen C-H; Deen MJ; Cheng Y; Matloubian M

Volume

2

Pagination

pp. 836-839

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

January 1, 2001

DOI

10.1109/mwsym.2001.967022

Name of conference

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)

Associated Experts

Chih-hung Chen

Associate Professor, Faculty of Engineering
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Jamal Deen

Professor, Faculty of Engineering
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Labels

Fields of Research (FoR)

4006 Communications Engineering40 Engineering
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