A self-consistent lumped radio frequency linear network model for MOSFETs taking into account the gate resistance

This paper describes a self-consistent lumped linear network model for MOSFETs that takes into account the distributed nature of the gate resistance. The model is verified with experimental results. The self-consistent model consists of placing a lumped resistance in series with the gate. The lumped resistance takes the value of the total gate resistance divided by a factor of three. To second order in jω, this is shown to be almost an exact approximation in determining all y-parameters and the equivalent noise resistance. The third-order terms, however, give rise to a 17% error. The value of f t for a MOS transistor shows no dependence with the gate resistance to all orders in jω. Furthermore, we also show that the thermal noise arising from the distributed gate resistance does not contribute to any additional equivalent input current noise. PACS No.: 73.40