A General Procedure for High-Frequency Noise Parameter De-embedding of MOSFETs by Taking the Capacitive Effects of Metal Interconnections into Account

A general procedure for the noise parameter de-embedding of MOSFETs based on cascade configurations using one “OPEN” and two “THRU” dummy structures is presented. This technique does not require any equivalent circuit modeling of probe pads or metal interconnections and is verified by RF noise measurements. This procedure is also valid for designs with long interconnections at the input or output ports of a device-under-test, and for devices operated at very high frequencies.