Conference
A General Procedure for High-Frequency Noise Parameter De-embedding of MOSFETs by Taking the Capacitive Effects of Metal Interconnections into Account
Abstract
A general procedure for the noise parameter de-embedding of MOSFETs based on cascade configurations using one “OPEN” and two “THRU” dummy structures is presented. This technique does not require any equivalent circuit modeling of probe pads or metal interconnections and is verified by RF noise measurements. This procedure is also valid for designs with long interconnections at the input or output ports of a device-under-test, and for devices …
Authors
Chen C-H; Deen MJ
Pagination
pp. 109-114
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2001
DOI
10.1109/icmts.2001.928647
Name of conference
ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)