STATISTICAL SIMULATIONS OF THE LOW-FREQUENCY NOISE IN POLYSILICON EMITTER BIPOLAR TRANSISTORS USING A MODEL BASED ON GENERATION-RECOMBINATION CENTERS

In this work, a new, physically based model for the low-frequency noise is investigated by statistical simulations. The proposed model is based only on superposition of generation-recombination centers, and can predict the frequency-, current- and area-dependence of the low-frequency noise, as well as the area-dependence of the variation in the noise level. Measurements on Bipolar Junction Transistors (BJTs) are found to be in excellent …