Conference
An effective gate resistance model for CMOS RF and noise modeling
Abstract
A physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices. The accuracy of the model is validated with 2D simulations and experimental data. In addition, the effect of the gate resistance on the device noise behavior has been studied with measured data. The result shows that an accurate gate …
Authors
Jin X; Ou J-J; Chen C-H; Liu W; Deen MJ; Gray PR; Hu C
Pagination
pp. 961-964
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1998
DOI
10.1109/iedm.1998.746514
Name of conference
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
Conference proceedings
International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217)
ISSN
0163-1918