Journal article
pMOS transistors, intrinsic mobility and their surface degradation parameters at cryogenic temperatures
Authors
Deen MJ; Wang J
Journal
IEE Proceedings G Circuits Devices and Systems, Vol. 137, No. 1,
Publisher
Institution of Engineering and Technology (IET)
Publication Date
February 1, 1990
DOI
10.1049/ip-g-2.1990.0007
ISSN
0956-3768