Comparison of low-frequency noise in III-V and Si/SiGe HBTs Conferences

authors

• Pascal, Fabien
• Guenard-Jarrix, Sylvie
• Delseny, Colette
• Penarier, Annick
• Chay, Cyril
• Deen, Jamal

status

• published 

publication date

• May 12, 2003

published in

• Proceedings of SPIE - The International Society for Optical Engineering  Journal

presented at event

• SPIE's First International Symposium on Fluctuations and Noise  Conference

keywords

• 1/F NOISE
• Acoustics
• BASE
• DEPENDENCE
• Engineering
• Engineering, Electrical & Electronic
• HETEROJUNCTION BIPOLAR-TRANSISTORS
• InP and SiGeHBTs
• Physical Sciences
• Physics
• Physics, Condensed Matter
• SIGE HBTS
• SPICE model
• Science & Technology
• Technology
• comparison and localization of 1/f noise
• figure-of-merit
• generation-recombination noise
• heterojunction bipolar transistors
• low-frequency noise
• temperature effects

Digital Object Identifier (DOI)

• 10.1117/12.488966

International Standard Book Number (ISBN) 10

• 0-8194-4973-3

start page

• 133

end page

• 146

volume

• 5113