Two-dimensional gain profiles of InP/InGaAs separate absorption, grading, charge, and multiplication avalanche photodiodes modeled by a simplified stochastic approach

The two-dimensional (2D) gain profiles of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs) have been modeled by using a simplified stochastic approach. The influence of the curved diffusion edge on the electric field in the periphery has been considered and electric field equations have been derived from the cylindrical Poisson’s equation. The electric field in the multiplication layer is …