Conference
Effects of Hot-Carrier Stress on the Performance of CMOS Low Noise Amplifier
Abstract
The effects of DC hot-carrier stress on the performance of a CMOS Low Noise Amplifier (LNA) are investigated. It was observed that the main effects caused by stress on the NMOS-FETs in the LNA are a decrease of the transconductance $g_{m}$ and an increase of the output conductance $g_{ds}$. As a result of these changes, the power gain of the amplifier S21, input matching S11and output matching S22 are deteriorated. The linearity of the LNA …
Authors
Naseh S; Deen MJ
Pagination
pp. 417-421
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2004
DOI
10.1109/relphy.2004.1315363
Name of conference
2004 IEEE International Reliability Physics Symposium. Proceedings