Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides Academic Article uri icon

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abstract

  • Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

authors

  • Agazzi, Laura
  • Bradley, Jonathan
  • Dijkstra, Meindert
  • Ay, Feridun
  • Roelkens, Gunther
  • Baets, Roel
  • Wörhoff, Kerstin
  • Pollnau, Markus

publication date

  • December 20, 2010