Conference
TEM studies of stress relaxation in GaAsN and GaP thin films
Abstract
TEM studies of the strain relaxation driven by lattice mismatch between a film and substrate has been carried out on GaAsN and GaP films grown on (100) GaAs by molecular beam epitaxy. The nature of the defects produced was shown to be directly related to the nature of the surface developed during growth of these compounds. In general, when the surface of the film is smooth, strain relaxation occurred by cracking, while in films with a rough …
Authors
Li Y; † GCW; * MN
Volume
85
Pagination
pp. 3073-3090
Publisher
Taylor & Francis
Publication Date
September 11, 2005
DOI
10.1080/14786430500154612
Conference proceedings
The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics
Issue
26-27
ISSN
1478-6435