Vacancy-Type Defects in Electron and Proton Irradiated II-VI Compounds Conferences

abstract

• AbstractIn this contribution we present a study aimed at comparing results of positron-lifetime and Doppler-broadening measurements on the wide-band-gap compound semiconductors ZnS, ZnSe, and ZnTe. To investigate the basic properties of intrinsic and radiation induced defects the samples were irradiated either with 3 MeV protons or 1 MeV electrons. The isochronal annealing was performed in an Ar atmosphere. It was found that electron and proton irradiation cause different changes in the positron annihilation characteristics. Several annealing stages were observed, related to the annealing of variously sized vacancy complexes.

authors

• Brunner, S
• Puff, W
• Mascher, Peter
• Balogh, AG

status

• published 

publication date

• January 1998

published in

• Materials Research Society Symposium - Proceedings  Journal

presented at event

• Symposium on Defect and Impurity Engineered Semiconductors II at the Materials-Research-Society Spring Meeting  Conference

keywords

• Engineering
• Engineering, Electrical & Electronic
• Materials Science
• Materials Science, Coatings & Films
• Materials Science, Multidisciplinary
• Science & Technology
• Technology

Digital Object Identifier (DOI)

• 10.1557/proc-510-437

International Standard Book Number (ISBN) 10

• 1-55899-416-5

start page

• 437

end page

• 442

volume

• 510