Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrity

In this study, using oxide breakdown voltage and time-dependent-dielectric breakdown measurements, thermal wave modulated reflectance (both mapping and imaging modes), positron annihilation spectroscopy and chemical etching/optical microscopy, we investigated:effects of D-defects upon oxide integrity,possible oxide breakdown mechanism due to D-defects, andnature of D-defects.