Conference
XANES and XES Studies of Luminescent Silicon Carbonitride Thin Films
Abstract
We investigated the photoluminescence (PL) and electronic properties of both undoped and doped silicon carbonitride (SiCN) thin films, fabricated using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD). The PL intensity of SiCN films is highly dependent on the annealing temperature and doping condition with rare-earth metals. Notably, Ce+3- and Tb+3-related luminescence were observed from doped samples after …
Authors
Khatami Z; Wilson PRJ; Wojcik J; Mascher P
Volume
50
Pagination
pp. 49-56
Publisher
The Electrochemical Society
Publication Date
April 1, 2013
DOI
10.1149/05041.0049ecst
Conference proceedings
ECS Transactions
Issue
41
ISSN
1938-5862