Passivation Studies on AlGaAs Surfaces Suitable for High Power Laser Development Conference Paper uri icon

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  • AbstractWe report on the optical characterization of sulphur (S) passivated AlxGa1−xAs/GaAs surfaces using photoluminescence (PL) and surface photovoltage (SPV) measurements. Both techniques show an enhancement in the near bandgap signal intensity, implying a reduction of the non-radiative recombination rate at the surface. To counter the instability of S-passivation, due to re-oxidation, dielectric layers of silicon nitride were deposited using electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD); the deposition of dielectric layers up to lOOnm thick does not appear to cause significant deterioration or stress at the insulator/AlGaAs interface. The dielectric layers are shown to be resistant to oxidation, and effective in maintaining the passivation effect over a period of weeks.


  • Edirisinghe, C
  • Ruda, HE
  • Koutzarov, I
  • Liu, Q
  • Jedral, L
  • Boudreau, MG
  • Boumerzoug, M
  • Brown, J
  • Mascher, Peter
  • Moore, A
  • Henderson, R

publication date

  • 1995