Passivation Studies on AlGaAs Surfaces Suitable for High Power Laser Development Conferences

abstract

• AbstractWe report on the optical characterization of sulphur (S) passivated AlxGa1−xAs/GaAs surfaces using photoluminescence (PL) and surface photovoltage (SPV) measurements. Both techniques show an enhancement in the near bandgap signal intensity, implying a reduction of the non-radiative recombination rate at the surface. To counter the instability of S-passivation, due to re-oxidation, dielectric layers of silicon nitride were deposited using electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD); the deposition of dielectric layers up to lOOnm thick does not appear to cause significant deterioration or stress at the insulator/AlGaAs interface. The dielectric layers are shown to be resistant to oxidation, and effective in maintaining the passivation effect over a period of weeks.

authors

• Edirisinghe, C
• Ruda, HE
• Koutzarov, I
• Liu, Q
• Jedral, L
• Boudreau, MG
• Boumerzoug, M
• Brown, J
• Mascher, Peter
• Moore, A
• Henderson, R

status

• published 

publication date

• 1995

published in

• Materials Research Society Symposium - Proceedings  Journal

presented at event

• Symposium on Defect and Impurity Engineered Semiconductors and Devices, at the 1995 MRS Spring Meeting  Conference

keywords

• Electrochemistry
• Engineering
• Engineering, Electrical & Electronic
• Materials Science
• Materials Science, Coatings & Films
• Physical Sciences
• Physics
• Physics, Applied
• Science & Technology
• Technology

Digital Object Identifier (DOI)

• 10.1557/proc-378-1007

International Standard Book Number (ISBN) 10

• 1-55899-281-2

start page

• 1007

end page

• 1012

volume

• 378