Conference
Passivation Studies on AlGaAs Surfaces Suitable for High Power Laser Development
Abstract
We report on the optical characterization of sulphur (S) passivated AlxGa1−xAs/GaAs surfaces using photoluminescence (PL) and surface photovoltage (SPV) measurements. Both techniques show an enhancement in the near bandgap signal intensity, implying a reduction of the non-radiative recombination rate at the surface. To counter the instability of S-passivation, due to re-oxidation, dielectric layers of silicon nitride were deposited using …
Authors
Edirisinghe C; Ruda HE; Koutzarov I; Liu Q; Jedral L; Boudreau MG; Boumerzoug M; Brown J; Mascher P; Moore A
Volume
378
Pagination
pp. 1007-1012
Publisher
Springer Nature
Publication Date
December 1995
DOI
10.1557/proc-378-1007
Conference proceedings
MRS Advances
Issue
1
ISSN
2731-5894