Studies of Defects in ZnO by Positron Annihilation Conferences

abstract

• AbstractIn order to investigate the basic properties of radiation-induced defects in ZnO crystals, positron annihilation lifetime and Doppler-broadening measurements were performed on crystals sinterd for 18 hours at 1200 °C and irradiated with 3 MeV protons at 223 K. The irradiation induced a colour change of the specimens from the original yellowish-white to dark orange or even brown. Isochronal annealing experiments showed three annealing stages, centred at about 150 °C, 500 – 550 °C, and 750 °C, respectively. These stages are related to the annealing of variously sized vacancy complexes.

authors

• Puff, Werner
• Brunner, Sebastian
• Mascher, Peter
• Balogh, Adam G

status

• published 

publication date

• 1995

published in

• Materials Research Society Symposium - Proceedings  Journal

presented at event

• Symposium on Defect and Impurity Engineered Semiconductors and Devices, at the 1995 MRS Spring Meeting  Conference

keywords

• Electrochemistry
• Engineering
• Engineering, Electrical & Electronic
• Materials Science
• Materials Science, Coatings & Films
• Physical Sciences
• Physics
• Physics, Applied
• Science & Technology
• Technology

Digital Object Identifier (DOI)

• 10.1557/proc-378-977

International Standard Book Number (ISBN) 10

• 1-55899-281-2

start page

• 977

end page

• 982

volume

• 378