H-induced effects in luminescent silicon nanostructures obtained from plasma enhanced chemical vapor deposition grown SiyO1−y:H(y>1∕3) thin films annealed in (Ar+5%H2)

Si y O 1 − y : H (y=0.36 and 0.42) alloy films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition and subsequently annealed in (Ar+5%H2) at different temperatures. Glancing angle x-ray diffraction and Fourier transform infrared spectroscopy measurements revealed the formation of silicon nanoclusters (Si-ncl) in an amorphous SiO2 matrix for films annealed at temperatures of 900°C and above. Negligible …