Defect Characterization Of InAs Wafers Using Positron Lifetime Spectroscopy Conferences

abstract

• AbstractPositron lifetime measurements on InAs wafers have shown that the positron bulk lifetime in InAs is 246±2 ps. Most samples exhibit a defect lifetime of 287±6 ps, which is attributable to monovacancy-impurity complexes with a concentration of 7±2×10 16 cm-3. Very heavily doped n-type samples exhibit a defect lifetime of 332–340 ps, characteristic of divacancies. The concentration of these defects is also close to 1017 cm−3. Both types of defects are stable for rapid thermal annealing up to 850 °C, and both defects are neutral. The formation of the divacancytype defects may be correlated with a discrepancy between the carrier concentration and the total

authors

• Mahony, J
• Mascher, Peter

status

• published 

publication date

• 1996

published in

• Materials Research Society Symposium - Proceedings  Journal

presented at event

• Symposium on Defects in Electronic Materials II, at the Combined Meeting of the Materials-Research-Society / International Conference on Electronic Materials  Conference

keywords

• Engineering
• Engineering, Electrical & Electronic
• Materials Science
• Materials Science, Multidisciplinary
• Science & Technology
• Technology

Digital Object Identifier (DOI)

• 10.1557/proc-442-547

International Standard Book Number (ISBN) 10

• 1-55899-346-0

start page

• 547

end page

• 552

volume

• 442