Induced Defects in ZnSe and ZnTe by Electron and Proton Irradiation and Defect‐Annealing Behaviour

In this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing in ZnSe and ZnTe. The nominally undoped samples were irradiated either with 1 MeV or 2 MeV electrons or with 3 MeV protons. The investigation was performed with positron lifetime and Doppler‐broadening measurements.